All MOSFET. RU35122R Datasheet

 

RU35122R Datasheet and Replacement


   Type Designator: RU35122R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-220
 

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RU35122R Datasheet (PDF)

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RU35122R

RU35122RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =2.7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

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 ru35122s.pdf pdf_icon

RU35122R

RU35122SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =2.7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

Datasheet: RU30P4B , RU30P4C , RU30P4C6 , RU30P4H , RU30P5D , RU30P5H , RU30S4H , RU30S5H , 5N60 , RU35122S , RU3520H , RU3560L , RU3568L , RU3568R , RU3582R , RU3582S , RU3710R .

History: IRF7306PBF | HSBA3062 | RU6085H | NTTFS5C680NL | NCE30P50G | IPI80N06S3-07 | STI16NM50N

Keywords - RU35122R MOSFET datasheet

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