All MOSFET. RU35122R Datasheet

 

RU35122R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU35122R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-220

 RU35122R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU35122R Datasheet (PDF)

 ..1. Size:308K  ruichips
 ru35122r.pdf

RU35122R RU35122R

RU35122RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =2.7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

 7.1. Size:299K  ruichips
 ru35122s.pdf

RU35122R RU35122R

RU35122SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =2.7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

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