RU35122R Datasheet and Replacement
Type Designator: RU35122R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 970 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO-220
RU35122R substitution
RU35122R Datasheet (PDF)
ru35122r.pdf
RU35122RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =2.7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
ru35122s.pdf
RU35122SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =2.7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
Datasheet: RU30P4B , RU30P4C , RU30P4C6 , RU30P4H , RU30P5D , RU30P5H , RU30S4H , RU30S5H , IRLB4132 , RU35122S , RU3520H , RU3560L , RU3568L , RU3568R , RU3582R , RU3582S , RU3710R .
History: NCEP050N10MG | RU30S4H | 5N65L-TF1-T | SVG087R0NT | PJF10NA65 | 5N65L-TA3-T | 5N65G-TF3-T
Keywords - RU35122R MOSFET datasheet
RU35122R cross reference
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RU35122R substitution
RU35122R replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NCEP050N10MG | RU30S4H | 5N65L-TF1-T | SVG087R0NT | PJF10NA65 | 5N65L-TA3-T | 5N65G-TF3-T
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