All MOSFET. RU3710R Datasheet

 

RU3710R Datasheet and Replacement


   Type Designator: RU3710R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220
 

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RU3710R Datasheet (PDF)

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RU3710R

RU3710R N-Channel Advanced Power MOSFET Features Pin Description 100V/60A RDS (ON)=14m(Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Lead Free and Green Available Applications Switching Application Systems N-Channel MOSFET Absolute Maximum Rating

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RU3710R

RU3710S N-Channel Advanced Power MOSFET Features Pin Description 100V/60A RDS (ON)=14m(Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-263 100% avalanche tested Lead Free and Green Available Applications Switching Application Systems N-Channel MOSFET Absolute Maximum Rating

Datasheet: RU35122R , RU35122S , RU3520H , RU3560L , RU3568L , RU3568R , RU3582R , RU3582S , TK10A60D , RU3710S , RU40120M , RU40120R , RU40120S , RU40130R , RU40150R , RU40150S , RU40190Q2 .

History: HM2312B | YJL03G10A | BL9N50-A | WML30N80M3 | RQA0004LXAQS | EKI06051 | WMJ30N80M3

Keywords - RU3710R MOSFET datasheet

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