All MOSFET. RU4099Q Datasheet

 

RU4099Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU4099Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 154 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-247

 RU4099Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU4099Q Datasheet (PDF)

 ..1. Size:326K  ruichips
 ru4099q.pdf

RU4099Q RU4099Q

RU4099Q N-Channel Advanced Power MOSFET Features Pin Description 40V/200A RDS (ON)=2.8m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Abs

 8.1. Size:333K  ruichips
 ru4099r.pdf

RU4099Q RU4099Q

RU4099R N-Channel Advanced Power MOSFET Features Pin Description 40V/200A RDS (ON)=2.8m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Abs

 9.1. Size:290K  ruichips
 ru4095l.pdf

RU4099Q RU4099Q

RU4095LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/99A,RDS (ON) =3.9m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Motor Drivers DC/DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter

 9.2. Size:290K  ruichips
 ru4090l.pdf

RU4099Q RU4099Q

RU4090LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/90A,RDS (ON) =4m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Motor Drivers Switch SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

 9.3. Size:1642K  cn vbsemi
 ru4090l.pdf

RU4099Q RU4099Q

RU4090Lwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATI

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQPF6N90C | FQP9N30

 

 
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