RU40E25L Datasheet and Replacement
Type Designator: RU40E25L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-252
RU40E25L substitution
RU40E25L Datasheet (PDF)
ru40e25l.pdf

RU40E25LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/25A,RDS (ON) =26m(Typ.)@VGS=10VRDS (ON) =38m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximu
ru40e32l.pdf

RU40E32LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/45A,RDS (ON) =9m(Typ.)@VGS=10VRDS (ON) =15m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum
ru40e80l.pdf

RU40E80LN-Channel Advanced Power MOSFETFeatures Pin Description 40V/80A,D RDS (ON) =4.5m(Typ.)@VGS=10V RDS (ON) =5.5m(Typ.)@VGS=4.5V Low RDS (ON) Super High Dense Cell Design ESD protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Switching ApplicationsGSN-Channel MOSFETAbso
Datasheet: RU40231R , RU40280R , RU4068L , RU4089R , RU4090L , RU4095L , RU4099Q , RU4099R , STP80NF70 , RU40E32L , RU40E80L , RU40L10H , RU40L10L , RU40P3C , RU40P4H , RU40S4H , RU4H10P .
History: SRT10N070L | STH6N95K5-2 | WMR140NV6LG4 | IPL60R185P7 | SFQ030N100C3 | IRL540NLPBF | STB46NF30
Keywords - RU40E25L MOSFET datasheet
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History: SRT10N070L | STH6N95K5-2 | WMR140NV6LG4 | IPL60R185P7 | SFQ030N100C3 | IRL540NLPBF | STB46NF30



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