RU40E80L MOSFET. Datasheet pdf. Equivalent
Type Designator: RU40E80L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 96 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 42 nC
Rise Time (tr): 55 nS
Drain-Source Capacitance (Cd): 295 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO-252
RU40E80L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU40E80L Datasheet (PDF)
ru40e80l.pdf
RU40E80LN-Channel Advanced Power MOSFETFeatures Pin Description 40V/80A,D RDS (ON) =4.5m(Typ.)@VGS=10V RDS (ON) =5.5m(Typ.)@VGS=4.5V Low RDS (ON) Super High Dense Cell Design ESD protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Switching ApplicationsGSN-Channel MOSFETAbso
ru40e25l.pdf
RU40E25LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/25A,RDS (ON) =26m(Typ.)@VGS=10VRDS (ON) =38m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximu
ru40e32l.pdf
RU40E32LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/45A,RDS (ON) =9m(Typ.)@VGS=10VRDS (ON) =15m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum
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