RU40E80L Datasheet and Replacement
Type Designator: RU40E80L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 295 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
RU40E80L Datasheet (PDF)
ru40e80l.pdf

RU40E80LN-Channel Advanced Power MOSFETFeatures Pin Description 40V/80A,D RDS (ON) =4.5m(Typ.)@VGS=10V RDS (ON) =5.5m(Typ.)@VGS=4.5V Low RDS (ON) Super High Dense Cell Design ESD protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Switching ApplicationsGSN-Channel MOSFETAbso
ru40e25l.pdf

RU40E25LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/25A,RDS (ON) =26m(Typ.)@VGS=10VRDS (ON) =38m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximu
ru40e32l.pdf

RU40E32LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/45A,RDS (ON) =9m(Typ.)@VGS=10VRDS (ON) =15m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FRM430R | APT5014SLLG | NVTA7002N | UPA1720 | IRF630M | MDD7N25RH | IPP048N04NG
Keywords - RU40E80L MOSFET datasheet
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History: FRM430R | APT5014SLLG | NVTA7002N | UPA1720 | IRF630M | MDD7N25RH | IPP048N04NG



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