All MOSFET. RU5H8R Datasheet

 

RU5H8R Datasheet and Replacement


   Type Designator: RU5H8R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220
 

 RU5H8R substitution

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RU5H8R Datasheet (PDF)

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RU5H8R

RU5H8RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description500V/8A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum Ra

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RU5H8R

RU5H8PN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description500V/8A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capability 100% avalanche testedTO-220F Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum R

Datasheet: RU55L18L , RU55L18R , RU5H13R , RU5H18Q , RU5H5L , RU5H5P , RU5H5R , RU5H8P , RU7088R , RU60100R , RU60101R , RU60120R , RU60190R , RU60200R , RU602B , RU60450Q , RU6050L .

History: WSF15N10 | IRLZ44ZSPBF | R6576ENZ1 | SI7117DN | STB20NM60 | SWF14N50D | NTTFS6H854NL

Keywords - RU5H8R MOSFET datasheet

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