All MOSFET. RU5H8R Datasheet

 

RU5H8R Datasheet and Replacement


   Type Designator: RU5H8R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220
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RU5H8R Datasheet (PDF)

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RU5H8R

RU5H8RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description500V/8A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum Ra

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RU5H8R

RU5H8PN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description500V/8A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capability 100% avalanche testedTO-220F Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum R

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SWD4N50K | LKK47-06C5 | TSM4424CS | OSG65R200KF | NTMS4177PR2G | IRFB3004GPBF | BRCS200P03DP

Keywords - RU5H8R MOSFET datasheet

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