All MOSFET. RU60120R Datasheet

 

RU60120R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU60120R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 188 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 125 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 105 nC
   Rise Time (tr): 108 nS
   Drain-Source Capacitance (Cd): 580 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm
   Package: TO-220

 RU60120R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU60120R Datasheet (PDF)

 ..1. Size:300K  ruichips
ru60120r.pdf

RU60120R
RU60120R

RU60120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/125A,RDS (ON) =5.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Inverter SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolPara

 9.1. Size:337K  ruichips
ru60100r.pdf

RU60120R
RU60120R

RU60100R N-Channel Advanced Power MOSFET Features Pin Description 60V/130A, RDS (ON) =4m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems

 9.2. Size:301K  ruichips
ru60101r.pdf

RU60120R
RU60120R

RU60101RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/100A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance Low Gate ChargeTO-220 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application Systems Inverter SystemsN-Channel MOSFETAbsolu

 9.3. Size:303K  ruichips
ru60190r.pdf

RU60120R
RU60120R

RU60190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/190A,RDS (ON) =3.7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Motor Control DC/DC Converter UPSN-Channel MOSFETAbsolute Maximum RatingsSymbol

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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