RU6070L Specs and Replacement

Type Designator: RU6070L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-252

RU6070L substitution

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RU6070L datasheet

 ..1. Size:294K  ruichips
ru6070l.pdf pdf_icon

RU6070L

RU6070L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/70A, RDS (ON) =6m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rat... See More ⇒

 0.1. Size:1286K  ruichips
ru6070l-a.pdf pdf_icon

RU6070L

RU6070L-A N-Channel Advanced Power MOSFET Features Pin Description 60V/70A, D RDS (ON) =6.8m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications Power Management. Switch Applications. G Load switch S N-Channel MOSFET Absolut... See More ⇒

 9.1. Size:305K  ruichips
ru6075r.pdf pdf_icon

RU6070L

RU6075R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/90A, RDS (ON) =5.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Supplies N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common ... See More ⇒

Detailed specifications: RU60450Q, RU6050L, RU6050R, RU6050S, RU6051K, RU6055L, RU6055R, RU6055S, AO4468, RU6075R, RU6080L, RU6099R, RU6099S, RU60C20R5, RU60D5H, RU60E16L, RU60E16R

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