All MOSFET. 2N6661SM Datasheet

 

2N6661SM MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6661SM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 6.25 W

Maximum Drain-Source Voltage |Vds|: 90 V

Maximum Drain Current |Id|: 0.9 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: TO220SM

2N6661SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N6661SM Datasheet (PDF)

4.1. 2n6661 vn88afd.pdf Size:73K _vishay

2N6661SM
2N6661SM

2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 1.6 V D Low-Voltage Oper

4.2. 2n6661-2.pdf Size:149K _vishay

2N6661SM
2N6661SM

New Product 2N6661-2 Vishay Siliconix N-Channel 90-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low On-Resistance: 3.6 ? Part VDS min. (V) RDS(on) max. (?) VGS(th) (V) ID (A) Low Threshold: 1.6 V Number Low Input Capacitance: 35 pF 4 at VGS = 10 V 2N6661-2 90 0.8 to 2 0.86 Fast Switching Speed: 6 ns Low Input and Output Leakage BENEFITS TO-205AD Low Offset Voltage

 4.3. 2n6660 2n6661.pdf Size:21K _supertex

2N6661SM
2N6661SM

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information.

4.4. 2n6661.pdf Size:369K _supertex

2N6661SM
2N6661SM

Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure > Low power drive requirement and Supertexs well-proven silicon-gate manufacturing > Ease of paralleling process. This combination produces a device

Datasheet: 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN , 2N6661JANTX , 2N6661JANTXV , 2N6661-LCC4 , IRFZ44V , 2N6755 , 2N6756 , 2N6756JAN , 2N6756JANTX , 2N6756JANTXV , 2N6756JTX , 2N6756JTXV , 2N6757 .

 
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