All MOSFET. RU80100S Datasheet

 

RU80100S Datasheet and Replacement


   Type Designator: RU80100S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-263
 

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RU80100S Datasheet (PDF)

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RU80100S

RU80100SN-Channel Advanced Power MOSFETFeatures Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10VD Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGSTO263DApplications High Current Switching Applications

 7.1. Size:336K  ruichips
 ru80100r.pdf pdf_icon

RU80100S

RU80100R N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications High Current Switching Applicati

 9.1. Size:302K  ruichips
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RU80100S

RU80190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 80V/190A,RDS (ON) =3.1m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inv

Datasheet: RU7550R , RU7550S , RU7570L , RU7580R , RU7582S , RU7590R , RU7H2K , RU80100R , 18N50 , RU80190R , RU8080R , RU8080S , RU8099R , RU80N15Q , RU80N15R , RU80N15S , RU80T4H .

History: NCE3008N | NCE40H10K | IRLU3714ZPBF | SFP026N100C3 | SFP070N80C2 | SI7302DN | SIS447DN

Keywords - RU80100S MOSFET datasheet

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