All MOSFET. RU80100S Datasheet

 

RU80100S MOSFET. Datasheet pdf. Equivalent

Type Designator: RU80100S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 188 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 470 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: TO-263

RU80100S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU80100S Datasheet (PDF)

0.1. ru80100s.pdf Size:323K _ruichips

RU80100S
RU80100S

RU80100SN-Channel Advanced Power MOSFETFeatures Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10VD Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGSTO263DApplications High Current Switching Applications

7.1. ru80100r.pdf Size:336K _ruichips

RU80100S
RU80100S

RU80100R N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications High Current Switching Applicati

 9.1. ru80190r.pdf Size:302K _ruichips

RU80100S
RU80100S

RU80190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 80V/190A,RDS (ON) =3.1m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inv

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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