All MOSFET. RU80N15S Datasheet

 

RU80N15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU80N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-263

 RU80N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU80N15S Datasheet (PDF)

 ..1. Size:317K  ruichips
 ru80n15s.pdf

RU80N15S RU80N15S

RU80N15SN-Channel Advanced Power MOSFETFeatures Pin Description 150V/80A, RDS (ON) =31m(Typ.)@VGS=10VD Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableGSTO263DApplications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPSG High Speed Power SwitchingSN-Channel

 7.1. Size:292K  ruichips
 ru80n15r.pdf

RU80N15S RU80N15S

RU80N15RN-Channel Advanced Power MOSFETFeatures Pin Description 150V/80ARDS (ON)=31m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingN-Channel MOSFETAbsolute Maximum R

 7.2. Size:318K  ruichips
 ru80n15q.pdf

RU80N15S RU80N15S

RU80N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/80A RDS (ON)=31m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Abs

 9.1. Size:266K  semihow
 hrd80n06k hru80n06k.pdf

RU80N15S RU80N15S

Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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