RU8205G Datasheet. Specs and Replacement

Type Designator: RU8205G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TSSOP-8

RU8205G substitution

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RU8205G datasheet

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RU8205G

RU8205G N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/6A, RDS (ON) =21m (Typ.) @ VGS=4.5V RDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged TSSOP-8 Lead Free and Green Available Applications Power Management Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T... See More ⇒

 8.1. Size:1183K  ruichips
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RU8205G

RU8205BC6 N-Channel Advanced Power MOSFET Features Pin Description 20V/6A, G2 RDS (ON) =11m (Typ.)@VGS=4.5V RDS (ON) =16m (Typ.)@VGS=2.5V D1/D2 Low RDS (ON) G1 Super High Dense Cell Design S2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D1/D2 Dual N-Channel MOSFET S1 SOT23-6 D1 D2 Applications Power Management G1 G2 ... See More ⇒

 8.2. Size:252K  ruichips
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RU8205G

RU8205C6 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/6A, RDS (ON) =22m (Typ.) @ VGS=4.5V RDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOT-23-6 Applications Power Management Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings ... See More ⇒

Detailed specifications: RU8080R, RU8080S, RU8099R, RU80N15Q, RU80N15R, RU80N15S, RU80T4H, RU8205C6, 18N50, RU8590R, RUE002N02TL, RUE003N02TL, RUF015N02TL, RUF025N02TL, RUL035N02TR, RUM001L02, RUM002N02T2L

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