RUE002N02TL Datasheet. Specs and Replacement

Type Designator: RUE002N02TL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: EMT3

RUE002N02TL substitution

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RUE002N02TL datasheet

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 rue002n02tl.pdf pdf_icon

RUE002N02TL

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa... See More ⇒

 5.1. Size:216K  rohm
 rue002n02.pdf pdf_icon

RUE002N02TL

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa... See More ⇒

 6.1. Size:176K  rohm
 rue002n05.pdf pdf_icon

RUE002N02TL

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3 (SC-75A) Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces)... See More ⇒

 9.1. Size:934K  rohm
 rue003n02.pdf pdf_icon

RUE002N02TL

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol QT 5) Parallel use is easy. Applications Switch... See More ⇒

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Detailed specifications: RU8099R, RU80N15Q, RU80N15R, RU80N15S, RU80T4H, RU8205C6, RU8205G, RU8590R, IRF520, RUE003N02TL, RUF015N02TL, RUF025N02TL, RUL035N02TR, RUM001L02, RUM002N02T2L, RUM002N05T2L, RUM003N02T2L

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