RUE002N02TL MOSFET. Datasheet pdf. Equivalent
Type Designator: RUE002N02TL
SMD Transistor Code: QR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.15 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 0.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 10 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: EMT3
RUE002N02TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUE002N02TL Datasheet (PDF)
1.1. rue002n02.pdf 
Size:216K _rohm
1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol : QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Package
1.2. rue002n02tl.pdf Size:215K _ruichips
1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol : QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa
2.1. rue002n05.pdf Size:176K _rohm
1.2V Drive Nch MOSFET
RUE002N05
? Structure ? Dimensions (Unit : mm)
Silicon N-channel MOSFET EMT3
(SC-75A)
Datasheet: RU8099R , RU80N15Q , RU80N15R , RU80N15S , RU80T4H , RU8205C6 , RU8205G , RU8590R , BUZ10 , RUE003N02TL , RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , RUM002N05T2L , RUM003N02T2L .
