All MOSFET. PHB143NQ04T Datasheet

 

PHB143NQ04T Datasheet and Replacement


   Type Designator: PHB143NQ04T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: D2PAK
 

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PHB143NQ04T Datasheet (PDF)

 ..1. Size:85K  philips
phb143nq04t php143nq04t.pdf pdf_icon

PHB143NQ04T

PHP/PHB143NQ04TN-channel TrenchMOS standard level FETRev. 01 13 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

 9.1. Size:83K  philips
phb145nq06t.pdf pdf_icon

PHB143NQ04T

PHB145NQ06TN-channel TrenchMOS standard level FETRev. 01 06 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC converter

 9.2. Size:64K  philips
phb14nq20t php14nq20t 1.pdf pdf_icon

PHB143NQ04T

Philips Semiconductors Product specification TrenchMOS transistor PHP14NQ20T, PHB14NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching High thermal cycling performance ID = 14 A Low thermal resistancegRDS(ON) 230 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power

 9.3. Size:86K  philips
phb146nq06lt.pdf pdf_icon

PHB143NQ04T

PHB146NQ06LTN-channel TrenchMOS logic level FETRev. 01 10 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC co

Datasheet: PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T , PHB119NQ06T , PHB11N06LT , PHB129NQ04LT , 2N7002 , PHB145NQ06T , PHB146NQ06LT , PHB152NQ03LTA , PHB153NQ08LT , PHB160NQ08T , PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T .

History: IRFH6200 | 2SK3919-ZK

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