PHP101NQ04T Datasheet and Replacement

PHP/PHB101NQ04TN-channel TrenchMOS standard level FETRev. 01 12 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-

PHP101NQ04TN-channel TrenchMOS standard level FETRev. 02 5 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat

PHP/PHU101NQ03LTTrenchMOS logic level FETRev. 02 25 February 2003 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP101NQ03LT in SOT78 (TO-220AB)PHU101NQ03LT in SOT533 (I-PAK).2. Features Low gate charge Low on-state resistance.3. Applications Optimized as a con

DISCRETE SEMICONDUCTORSDATA SHEETPHP109P-channel enhancement modeMOS transistor1997 Jun 18Product specificationSupersedes data of 1996 Jun 11File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modePHP109MOS transistorFEATURES PINNING - SO8 (SOT96-1) High-speed switchingPIN SYMBOL DESCRIPTION No seconda

PHP/PHB/PHD108NQ03LTTrenchMOS logic level FETRev. 02 11 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHP108NQ03LT in SOT78 (TO-220AB)PHB108NQ03LT in SOT404 (D2-PAK)PHD108NQ03LT in SOT428 (D-PAK).1.2 Features Logic level compatibl

Philips Semiconductors Product Specification PowerMOS transistor PHP10N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. The device is VDS Drain-source voltage 100 Vintended for use in Switched Mode ID Drain current (DC) 11 APower Supplies (SMPS), motor Ptot Total power dissipation 6

Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 10.7 Ablocking voltage, fast switching and Ptot Total power di

DISCRETE SEMICONDUCTORSDATA SHEETPHP1035P-channel enhancement modeMOS transistorPreliminary specification 1998 Feb 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Preliminary specificationP-channel enhancement modePHP1035MOS transistorFEATURES PINNING - SOT96-1 (SO8) Very low RDSonPIN SYMBOL DESCRIPTION High-speed switching1 s source N

Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 9.6 Ag Low thermal resistanceRDS(ON) 0.75 sGENERAL DESCRIPTION PINNING SOT78 (TO22

DISCRETE SEMICONDUCTORSDATA SHEETPHP1025P-channel enhancement modeMOS transistorObjective specification 1998 Feb 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationP-channel enhancement modePHP1025MOS transistorFEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low thresholdPIN SYMBOL DESCRIPTION High-speed switching1 s