PHU77NQ03T Datasheet. Specs and Replacement

Type Designator: PHU77NQ03T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: IPAK

PHU77NQ03T substitution

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PHU77NQ03T datasheet

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PHU77NQ03T

PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 28 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Fast switching Low thermal resistance 1.3 Applications DC-to-DC converters Computer motherboard 1.4 Quick reference data VDS 25 V... See More ⇒

Detailed specifications: PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, IRF2807, PHU78NQ03LT, PHW7N60, PHW80NQ10T, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T, PHX20N06T, PHX23NQ10T

Keywords - PHU77NQ03T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.