PHU77NQ03T MOSFET. Datasheet pdf. Equivalent
Type Designator: PHU77NQ03T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: IPAK
PHU77NQ03T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHU77NQ03T Datasheet (PDF)
phd77nq03t phu77nq03t.pdf
PHD/PHU77NQ03TN-channel TrenchMOS FETRev. 01 28 November 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Fast switching Low thermal resistance1.3 Applications DC-to-DC converters Computer motherboard1.4 Quick reference data VDS 25 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPP120N20NFD
History: IPP120N20NFD
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918