All MOSFET. PHU77NQ03T Datasheet

 

PHU77NQ03T Datasheet and Replacement


   Type Designator: PHU77NQ03T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: IPAK
 

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PHU77NQ03T Datasheet (PDF)

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PHU77NQ03T

PHD/PHU77NQ03TN-channel TrenchMOS FETRev. 01 28 November 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Fast switching Low thermal resistance1.3 Applications DC-to-DC converters Computer motherboard1.4 Quick reference data VDS 25 V

Datasheet: PHP78NQ03LT , PHP83N03LT , PHP96NQ03LT , PHP9N60E , PHU101NQ03LT , PHU108NQ03LT , PHU11NQ10T , PHU66NQ03LT , IRFB31N20D , PHU78NQ03LT , PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T , PHX20N06T , PHX23NQ10T .

History: SIHFD9210 | AM90N06-04M2B | SSM3K56CT | AUIRFP4227 | VBZE04N03 | IXTJ3N150 | UTC654

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