PJD1NA80 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJD1NA80
Marking Code: D1NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 17 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
Package: TO-252
PJD1NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJD1NA80 Datasheet (PDF)
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PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET 500 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A
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PPJN1NA60 / PJW1NA60 / PJU1NA60 / PJD1NA60 600V N-Channel MOSFET 600 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F