PJD4NA90 Datasheet. Specs and Replacement

Type Designator: PJD4NA90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: TO-252AA

PJD4NA90 substitution

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PJD4NA90 datasheet

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PJD4NA90

PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 900V N-Channel MOSFET 900 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A... See More ⇒

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PPJU4NA60 / PJD4NA60 / PJP4NA60 / PJF4NA60 600V N-Channel MOSFET 600 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A... See More ⇒

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PPJU4NA65 / PJD4NA65 / PJP4NA65 / PJF4NA65 650V N-Channel MOSFET 650 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A... See More ⇒

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Detailed specifications: PJD2NA60, PJD2NA60H, PJD2NA70, PJD3NA50, PJD3NA80, PJD4NA60, PJD4NA65, PJD4NA70, IRFP064N, PJD5NA50, PJD5NA80, PJD6NA40, PJD6NA70, PJD7NA60, PJD7NA65, PJD8NA50, PJF10NA60

Keywords - PJD4NA90 MOSFET specs

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