PJF10NA60 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJF10NA60
Marking Code: F10NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 137 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: ITO-220AB-F
PJF10NA60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJF10NA60 Datasheet (PDF)
pjf10na60 pjp10na60.pdf
PPJP10NA60 / PJF10NA60 600V N-Channel MOSFET 600 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@5A
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