PJN1NA60A Datasheet. Specs and Replacement

Type Designator: PJN1NA60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.9 Ohm

Package: TO-92

PJN1NA60A substitution

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PJN1NA60A datasheet

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PJN1NA60A

PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A 600V N-Channel MOSFET 600 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A... See More ⇒

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PJN1NA60A

PPJN1NA60 / PJW1NA60 / PJU1NA60 / PJD1NA60 600V N-Channel MOSFET 600 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A... See More ⇒

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PJN1NA60A

PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET 500 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A... See More ⇒

Detailed specifications: PJF6NA90, PJF7NA60, PJF7NA65, PJF7NA80, PJF8NA50, PJF9NA90, PJN1NA50, PJN1NA60, AON7408, PJP10NA60, PJP10NA65, PJP10NA80, PJP12NA60, PJP13NA50, PJP1NA80, PJP2NA60, PJP2NA70

Keywords - PJN1NA60A MOSFET specs

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