PJP10NA60 Datasheet. Specs and Replacement

Type Designator: PJP10NA60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 137 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220AB

PJP10NA60 substitution

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PJP10NA60 datasheet

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PJP10NA60

PPJP10NA60 / PJF10NA60 600V N-Channel MOSFET 600 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@5A... See More ⇒

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PJP10NA60

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PPJP10NA80 / PJF10NA80 800V N-Channel MOSFET 800 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@ 5A... See More ⇒

Detailed specifications: PJF7NA60, PJF7NA65, PJF7NA80, PJF8NA50, PJF9NA90, PJN1NA50, PJN1NA60, PJN1NA60A, 2SK3878, PJP10NA65, PJP10NA80, PJP12NA60, PJP13NA50, PJP1NA80, PJP2NA60, PJP2NA70, PJP3NA80

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