PJP10NA80 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJP10NA80
Marking Code: P10NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 31 nS
Drain-Source Capacitance (Cd): 180 pF
Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
Package: TO-220AB
PJP10NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJP10NA80 Datasheet (PDF)
1.1. pjf10na80 pjp10na80.pdf 
Size:321K _panjit
PPJP10NA80 / PJF10NA80 800V N-Channel MOSFET 800 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@ 5A<1.15Ω High switching speed ITO-220AB-F TO-220AB Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen
3.1. pjf10na60 pjp10na60.pdf Size:340K _panjit
PPJP10NA60 / PJF10NA60 600V N-Channel MOSFET 600 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@5A<0.9Ω High switching speed ITO-220AB-F TO-220AB Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen F
3.2. pjf10na65 pjp10na65.pdf Size:335K _panjit
PPJP10NA65 / PJF10NA65 650V N-Channel MOSFET 650 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@5A<1Ω High switching speed ITO-220AB-F TO-220AB Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Fre
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
