PJP10NA80 Specs and Replacement
Type Designator: PJP10NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
Package: TO-220AB
PJP10NA80 substitution
PJP10NA80 datasheet
pjf10na80 pjp10na80.pdf
PPJP10NA80 / PJF10NA80 800V N-Channel MOSFET 800 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@ 5A... See More ⇒
pjf10na65 pjp10na65.pdf
PPJP10NA65 / PJF10NA65 650V N-Channel MOSFET 650 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@5A... See More ⇒
pjf10na60 pjp10na60.pdf
PPJP10NA60 / PJF10NA60 600V N-Channel MOSFET 600 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@5A... See More ⇒
Detailed specifications: PJF7NA80 , PJF8NA50 , PJF9NA90 , PJN1NA50 , PJN1NA60 , PJN1NA60A , PJP10NA60 , PJP10NA65 , 2N7002 , PJP12NA60 , PJP13NA50 , PJP1NA80 , PJP2NA60 , PJP2NA70 , PJP3NA80 , PJP4NA60 , PJP4NA65 .
Keywords - PJP10NA80 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AGM16N10C | TK8P60W5
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