PJP4NA70 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJP4NA70
Marking Code: P4NA70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.5 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-220AB
PJP4NA70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJP4NA70 Datasheet (PDF)
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PPJU4NA60 / PJD4NA60 / PJP4NA60 / PJF4NA60 600V N-Channel MOSFET 600 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A
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PPJU4NA65 / PJD4NA65 / PJP4NA65 / PJF4NA65 650V N-Channel MOSFET 650 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A
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