All MOSFET. IRFS9623 Datasheet

 

IRFS9623 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFS9623
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO220F

 IRFS9623 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS9623 Datasheet (PDF)

 8.1. Size:286K  1
 irfs9640 irfs9641.pdf

IRFS9623 IRFS9623

 9.1. Size:290K  1
 irfs9530 irfs9531.pdf

IRFS9623 IRFS9623

 9.2. Size:282K  1
 irfs9240 irfs9241.pdf

IRFS9623 IRFS9623

 9.3. Size:296K  1
 irfs9540 irfs9541.pdf

IRFS9623 IRFS9623

 9.4. Size:288K  1
 irfs9140 irfs9141.pdf

IRFS9623 IRFS9623

 9.5. Size:232K  international rectifier
 irfs9n60apbf.pdf

IRFS9623 IRFS9623

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 9.6. Size:270K  international rectifier
 irfs9n60a.pdf

IRFS9623 IRFS9623

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 9.7. Size:26K  samsung
 irfs8xx irfs9xxx sss4n60 sss6n60.pdf

IRFS9623

 9.8. Size:13K  samsung
 irfs91xx irfs92xx.pdf

IRFS9623

 9.9. Size:225K  vishay
 irfs9n60a sihfs9n60a.pdf

IRFS9623 IRFS9623

IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr

 9.10. Size:278K  inchange semiconductor
 irfs9n60a.pdf

IRFS9623 IRFS9623

iscN-Channel MOSFET Transistor IRFS9N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT1004RCN

 

 
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