SFF10N100M Datasheet. Specs and Replacement

Type Designator: SFF10N100M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-254

SFF10N100M substitution

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SFF10N100M datasheet

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Detailed specifications: PJU7NA60, PJU7NA65, PJU8NA50, SFF054M, SFF054Z, SFF100N20, SFF10N100, SFF10N100B, AO3400A, SFF10N100N, SFF10N100P, SFF10N100Z, SFF10N60, SFF110S, SFF116N10M, SFF116N10Z, SFF11N80B

Keywords - SFF10N100M MOSFET specs

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