SFF11N80B Datasheet. Specs and Replacement

Type Designator: SFF11N80B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: MILPACK2

SFF11N80B substitution

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SFF11N80B datasheet

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SFF11N80B

SFF110S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3.5 A /100 Volts / 0.6 DESIGNER S DATA SHEET N-Channel MOSFET Transistor Features Rugged Construction with Polysilcon Gate Small Footprint Hermetic Surface Mount Device with Excellent Thermal Prop... See More ⇒

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Detailed specifications: SFF10N100M, SFF10N100N, SFF10N100P, SFF10N100Z, SFF10N60, SFF110S, SFF116N10M, SFF116N10Z, IRLB3034, SFF11N80M, SFF11N80N, SFF11N80P, SFF11N80Z, SFF120-28Q, SFF12N60, SFF130, SFF130-28

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