All MOSFET. SFF11N80M Datasheet

 

SFF11N80M Datasheet and Replacement


   Type Designator: SFF11N80M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO-254
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SFF11N80M Datasheet (PDF)

 ..1. Size:144K  ssdi
 sff11n80m sff11n80z.pdf pdf_icon

SFF11N80M

SFF11N80 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 11 AMP / 800 Volts Part Number / Ordering Information 1/ 0.95 SFF11N80 __ __ __ N-Channel MOSFET Screening 2/ __ = Not Screen TX = TX Level

 6.1. Size:164K  ssdi
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SFF11N80M

 6.2. Size:151K  ssdi
 sff11n80b.pdf pdf_icon

SFF11N80M

 9.1. Size:31K  ssdi
 sff110s.pdf pdf_icon

SFF11N80M

SFF110S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3.5 A /100 Volts / 0.6 DESIGNERS DATA SHEET N-Channel MOSFET Transistor Features: Rugged Construction with Polysilcon Gate Small Footprint Hermetic Surface Mount Device with Excellent Thermal Prop

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Keywords - SFF11N80M MOSFET datasheet

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