SFF11N80P Datasheet and Replacement
Type Designator: SFF11N80P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-259
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SFF11N80P Datasheet (PDF)
sff11n80m sff11n80z.pdf

SFF11N80 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 11 AMP / 800 Volts Part Number / Ordering Information 1/ 0.95 SFF11N80 __ __ __ N-Channel MOSFET Screening 2/ __ = Not Screen TX = TX Level
sff110s.pdf

SFF110S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3.5 A /100 Volts / 0.6 DESIGNERS DATA SHEET N-Channel MOSFET Transistor Features: Rugged Construction with Polysilcon Gate Small Footprint Hermetic Surface Mount Device with Excellent Thermal Prop
Datasheet: SFF10N100Z , SFF10N60 , SFF110S , SFF116N10M , SFF116N10Z , SFF11N80B , SFF11N80M , SFF11N80N , SPW47N60C3 , SFF11N80Z , SFF120-28Q , SFF12N60 , SFF130 , SFF130-28 , SFF130G , SFF130J , SFF1310M .
History: HFS4N50 | HFS4N90 | TSM2311CX | SI2308 | FCPF165N65S3R0L | IRFHM8235 | NTMFS5C604NL
Keywords - SFF11N80P MOSFET datasheet
SFF11N80P cross reference
SFF11N80P equivalent finder
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History: HFS4N50 | HFS4N90 | TSM2311CX | SI2308 | FCPF165N65S3R0L | IRFHM8235 | NTMFS5C604NL



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