SFF35N20M Datasheet. Specs and Replacement

Type Designator: SFF35N20M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 225 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-254

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SFF35N20M datasheet

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SFF35N20M

SFF35N20M Solid State Devices, Inc. SFF35N20Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate TO-254 and TO-254Z MOSFET Features TRENCH GATE technology Lowest ON-resistance in the industry UIS ... See More ⇒

Detailed specifications: SFF2N60-KR, SFF330-28, SFF340, SFF340-28, SFF340C, SFF340J, SFF340M, SFF340Z, BS170, SFF35N20Z, SFF40N10-28, SFF40N30, SFF40N30B, SFF40N30M, SFF40N30MDB, SFF40N30MUB, SFF40N30N

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