All MOSFET. IRFSZ22 Datasheet

 

IRFSZ22 Datasheet and Replacement


   Type Designator: IRFSZ22
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO220F
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IRFSZ22 Datasheet (PDF)

 8.2. Size:1006K  samsung
irfsz24a.pdf pdf_icon

IRFSZ22

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 9.1. Size:280K  1
irfsz14a.pdf pdf_icon

IRFSZ22

 9.2. Size:498K  samsung
irfsz34a.pdf pdf_icon

IRFSZ22

Advanced Power MOSFETFEATURESBVDSS = 60V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

Datasheet: IRFS9641 , IRFS9642 , IRFS9643 , IRFS9N60A , IRFSL11N50A , IRFSL9N60A , IRFSZ14A , IRFSZ20 , IRFP450 , IRFSZ24 , IRFSZ24A , IRFSZ25 , IRFSZ30 , IRFSZ32 , IRFSZ34 , IRFSZ34A , IRFSZ35 .

History: WML13N65EM | TMD5N40ZG | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - IRFSZ22 MOSFET datasheet

 IRFSZ22 cross reference
 IRFSZ22 equivalent finder
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