All MOSFET. SFF7002KA2GW Datasheet

 

SFF7002KA2GW MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFF7002KA2GW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   Qgⓘ - Total Gate Charge: 0.6 nC
   Cossⓘ - Output Capacitance: 6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: GULLWING

 SFF7002KA2GW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFF7002KA2GW Datasheet (PDF)

 ..1. Size:174K  ssdi
 sff7002ka2gw.pdf

SFF7002KA2GW SFF7002KA2GW

SFF7002KA2GW Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 Dual Microminiature Package ssdi@ssdi-power.com * www.ssdi-power.com 300 mA 60 Volts 2 DESIGNERS DATA SHEET Dual N-Channel Logic Level Part Number / Ordering Information 1/ TrenchFET MOSFET SFF7002KA2 __ __ Features:

 9.1. Size:16K  ssdi
 sff70n04s.pdf

SFF7002KA2GW SFF7002KA2GW

SFF70N04SERIESSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-1773ssdi@ssdi-power.com * www.ssdi-power.com70 AMP / 40 VOLTSDESIGNER'S DATA SHEET0.010 N-CHANNELPart Number /Ordering Information 1/POWER MOSFETSFF70N04 S.5 TXScreening 2/: _ = Not ScreenedTX = TX LevelAPPLICATION NOTES:

 9.2. Size:29K  ssdi
 sff70n10m sff70n10z.pdf

SFF7002KA2GW SFF7002KA2GW

SFF70N10MSFF70N10ZSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-177370 AMP600 VOLTDESIGNER'S DATA SHEET0.030FEATURES:N-CHANNEL Rugged construction with poly silicon gatePOWER MOSFET Ultra low RDS (on) and high transconductance Excellent high temperature stabilityTO-254 (M)

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History: 2SK2051-L

 

 
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