All MOSFET. IRFSZ24 Datasheet

 

IRFSZ24 Datasheet and Replacement


   Type Designator: IRFSZ24
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220F
 

 IRFSZ24 substitution

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IRFSZ24 Datasheet (PDF)

 0.1. Size:1006K  samsung
irfsz24a.pdf pdf_icon

IRFSZ24

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 9.1. Size:280K  1
irfsz14a.pdf pdf_icon

IRFSZ24

 9.2. Size:498K  samsung
irfsz34a.pdf pdf_icon

IRFSZ24

Advanced Power MOSFETFEATURESBVDSS = 60V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

Datasheet: IRFS9642 , IRFS9643 , IRFS9N60A , IRFSL11N50A , IRFSL9N60A , IRFSZ14A , IRFSZ20 , IRFSZ22 , IRF9540N , IRFSZ24A , IRFSZ25 , IRFSZ30 , IRFSZ32 , IRFSZ34 , IRFSZ34A , IRFSZ35 , IRFSZ40 .

History: TPC8133 | AP4034GMT-HF | FTK3N80D | TPCA8027-H | 2SK2662 | SSF2610E | LSE65R570GT

Keywords - IRFSZ24 MOSFET datasheet

 IRFSZ24 cross reference
 IRFSZ24 equivalent finder
 IRFSZ24 lookup
 IRFSZ24 substitution
 IRFSZ24 replacement

 

 
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