All MOSFET. IRFSZ24A Datasheet

 

IRFSZ24A Datasheet and Replacement


   Type Designator: IRFSZ24A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO220F
 

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IRFSZ24A Datasheet (PDF)

 ..1. Size:1006K  samsung
 irfsz24a.pdf pdf_icon

IRFSZ24A

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 7.1. Size:42K  1
 irfsz20 irfsz24 irfsz30 irfsz34 irfsz40 irfsz44.pdf pdf_icon

IRFSZ24A

 9.1. Size:280K  1
 irfsz14a.pdf pdf_icon

IRFSZ24A

 9.2. Size:498K  samsung
 irfsz34a.pdf pdf_icon

IRFSZ24A

Advanced Power MOSFETFEATURESBVDSS = 60V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

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Datasheet: IRFS9643 , IRFS9N60A , IRFSL11N50A , IRFSL9N60A , IRFSZ14A , IRFSZ20 , IRFSZ22 , IRFSZ24 , IRFB3607 , IRFSZ25 , IRFSZ30 , IRFSZ32 , IRFSZ34 , IRFSZ34A , IRFSZ35 , IRFSZ40 , IRFSZ42 .

Keywords - IRFSZ24A MOSFET datasheet

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