IRFSZ24A MOSFET Datasheet: N-Ch, 60V, 14A. Full specification with pinout and replacement list

IRFSZ24A Specs and Replacement

Type Designator: IRFSZ24A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO220F

IRFSZ24A substitution

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IRFSZ24A datasheet

..1. Size:1006K samsung
irfsz24a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒

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irfsz20 irfsz24 irfsz30 irfsz34 irfsz40 irfsz44.pdf pdf_icon

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9.2. Size:498K samsung
irfsz34a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 60V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.030 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒