SFF9140Z MOSFET. Datasheet pdf. Equivalent
Type Designator: SFF9140Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-254Z
SFF9140Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFF9140Z Datasheet (PDF)
sff9140.pdf
SFF9140Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -13.2 A Improved Gate Charge 175oC Operating TemperatureTO-3PF Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.161 (Typ.)1231.Gate 2. Drain 3. Source
sff9140j.pdf
SFF9140J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -18 AMPS Designers Data Sheet -100 VOLTS 0.20 FEATURES: Rugged Construction with Poly Silicon Gate P-CHANNEL Low RDS(on) and High Transconductance POWER MOSFET Excellent High Temperature S
sff914028.pdf
SENSITRON SHD226408 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 472, REV A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.8 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ID - - 3.9 Amps CONTINUOUS DRAIN CURRENT @ TC
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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