IRFSZ32 Specs and Replacement

Type Designator: IRFSZ32

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO220F

IRFSZ32 substitution

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IRFSZ32 datasheet

 8.1. Size:42K  1
 irfsz20 irfsz24 irfsz30 irfsz34 irfsz40 irfsz44.pdf pdf_icon

IRFSZ32

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 8.2. Size:498K  samsung
 irfsz34a.pdf pdf_icon

IRFSZ32

Advanced Power MOSFET FEATURES BVDSS = 60V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.030 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒

 9.1. Size:280K  1
 irfsz14a.pdf pdf_icon

IRFSZ32

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 9.2. Size:1006K  samsung
 irfsz24a.pdf pdf_icon

IRFSZ32

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒

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Detailed specifications: IRFSL9N60A, IRFSZ14A, IRFSZ20, IRFSZ22, IRFSZ24, IRFSZ24A, IRFSZ25, IRFSZ30, 12N60, IRFSZ34, IRFSZ34A, IRFSZ35, IRFSZ40, IRFSZ42, IRFSZ44, IRFSZ44A, IRFSZ45

Keywords - IRFSZ32 MOSFET specs

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