IRFSZ32 Datasheet and Replacement
Type Designator: IRFSZ32
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO220F
IRFSZ32 substitution
IRFSZ32 Datasheet (PDF)
irfsz34a.pdf

Advanced Power MOSFETFEATURESBVDSS = 60V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
irfsz24a.pdf

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch
Datasheet: IRFSL9N60A , IRFSZ14A , IRFSZ20 , IRFSZ22 , IRFSZ24 , IRFSZ24A , IRFSZ25 , IRFSZ30 , IRF1010E , IRFSZ34 , IRFSZ34A , IRFSZ35 , IRFSZ40 , IRFSZ42 , IRFSZ44 , IRFSZ44A , IRFSZ45 .
History: IXFN340N06 | HGD040N06S | IRFR3711ZPBF | NCE60N2K1I | HGN040N06SL | IRFR3711ZCPBF | IRFR3910PBF
Keywords - IRFSZ32 MOSFET datasheet
IRFSZ32 cross reference
IRFSZ32 equivalent finder
IRFSZ32 lookup
IRFSZ32 substitution
IRFSZ32 replacement
History: IXFN340N06 | HGD040N06S | IRFR3711ZPBF | NCE60N2K1I | HGN040N06SL | IRFR3711ZCPBF | IRFR3910PBF



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