SFF9250L Datasheet: MOSFET, P-Ch, 200V, 12.6A. Full specification with pinout and replacement list

SFF9250L Datasheet. Specs and Replacement

Type Designator: SFF9250L 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO-3PF

SFF9250L substitution

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SFF9250L datasheet

..1. Size:545K fairchild semi
sff9250l.pdf pdf_icon

Advanced Power MOSFET SFF9250L FEATURES BVDSS = -200 V Logic-Level Gate Drive RDS(on) = 0.23 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = -12.6 A Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10uA (Max.) @ VDS=-200V Lower RDS(ON) 0.175 (Typ.) 1 2 3 1.Gate 2. ... See More ⇒

9.1. Size:906K samsung
sff9244.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) 0.549 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic... See More ⇒

9.2. Size:903K samsung
sff9240.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -7.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 0.344 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic... See More ⇒

9.3. Size:162K ssdi
sff9230m sff9230z.pdf pdf_icon