SFR9014TF Datasheet. Specs and Replacement

Type Designator: SFR9014TF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: DPAK

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SFR9014TF substitution

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SFR9014TF datasheet

 ..1. Size:226K  fairchild semi
 sfr9014tf.pdf pdf_icon

SFR9014TF

SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -5.3 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max... See More ⇒

 7.1. Size:229K  fairchild semi
 sfu9014 sfr9014.pdf pdf_icon

SFR9014TF

SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -5.3 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max... See More ⇒

 7.2. Size:495K  samsung
 sfr9014.pdf pdf_icon

SFR9014TF

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -60V Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒

 9.1. Size:238K  fairchild semi
 sfu9034 sfr9034.pdf pdf_icon

SFR9014TF

SFR/U9034 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -14 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A(Max.) @ VDS = -60V Lower RDS(ON) 0.106 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol... See More ⇒

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Detailed specifications: SFP730D, SFP740, SFP75N08R, SFP830, SFP830D, SFP840, SFP9640L, SFP9N50, AO4407, SFR9024TM, SFR9034TF, SFR9110TF, SFT1452, SFT210DE, SFT6661, SFW9530TM, SFW9640TM

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