All MOSFET. SFR9014TF Datasheet

 

SFR9014TF Datasheet and Replacement


   Type Designator: SFR9014TF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: DPAK
 

 SFR9014TF substitution

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SFR9014TF Datasheet (PDF)

 ..1. Size:226K  fairchild semi
 sfr9014tf.pdf pdf_icon

SFR9014TF

SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

 7.1. Size:229K  fairchild semi
 sfu9014 sfr9014.pdf pdf_icon

SFR9014TF

SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

 7.2. Size:495K  samsung
 sfr9014.pdf pdf_icon

SFR9014TF

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 9.1. Size:238K  fairchild semi
 sfu9034 sfr9034.pdf pdf_icon

SFR9014TF

SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol

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Datasheet: SFP730D , SFP740 , SFP75N08R , SFP830 , SFP830D , SFP840 , SFP9640L , SFP9N50 , 2SK3918 , SFR9024TM , SFR9034TF , SFR9110TF , SFT1452 , SFT210DE , SFT6661 , SFW9530TM , SFW9640TM .

Keywords - SFR9014TF MOSFET datasheet

 SFR9014TF cross reference
 SFR9014TF equivalent finder
 SFR9014TF lookup
 SFR9014TF substitution
 SFR9014TF replacement

 

 
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