SQM120N03-1M5L Datasheet and Replacement
Type Designator: SQM120N03-1M5L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 375
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id| ⓘ - Maximum Drain Current: 120
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Qg ⓘ - Total Gate Charge: 179
nC
tr ⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 2204
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015
Ohm
Package:
TO-263
SQM120N03-1M5L substitution
-
MOSFET ⓘ Cross-Reference Search
SQM120N03-1M5L Datasheet (PDF)
..1. Size:168K vishay
sqm120n03-1m5l.pdf 
SQM120N03-1m5LVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.0015 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0020 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Single AEC-Q10
6.1. Size:743K vishay
sqm120n04-04.pdf
SQM120N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Co
6.2. Size:748K vishay
sqm120n02-1m3l.pdf
SQM120N02-1m3Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 10 V 0.0013 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0017 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Sin
6.3. Size:167K vishay
sqm120n08-05.pdf
SQM120N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 75DefinitionRDS(on) () at VGS = 10 V 0.0048 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS TestedTO-263
6.4. Size:168K vishay
sqm120n06-3m5l.pdf
SQM120N06-3m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0039 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration Single
6.5. Size:703K vishay
sqm120n04-02l.pdf
SQM120N04-02Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0023 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0041 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single
6.6. Size:155K vishay
sqm120n04-1m9.pdf
SQM120N04-1m9www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0019 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please
6.7. Size:184K vishay
sqm120n06-06.pdf
SQM120N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.006 AEC-Q101 qualified dID (A) 120 100 % Rg and UIS testedConfiguration SinglePackage TO-263 Material categorization: for definitions of co
6.8. Size:102K vishay
sqm120n04-1m7l.pdf
SQM120N04-1m7Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0020 AEC-Q101 QualifieddID (A) 120 Material categorization:Configuration Sin
6.9. Size:169K vishay
sqm120n04-2m1.pdf
SQM120N04-2m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0021 100 % Rg and UIS TestedID (A) 120 AEC-Q101 QualifieddConfiguration Single Material categorization:DFor definitions of compliance
6.10. Size:715K vishay
sqm120n04-03l.pdf
SQM120N04-03Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0053 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single
6.11. Size:166K vishay
sqm120n04-1m8.pdf
SQM120N04-1m8Vishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0018 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Compliant to RoHS
6.12. Size:750K vishay
sqm120n06-04l.pdf
SQM120N06-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0050 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single
6.13. Size:767K vishay
sqm120n04-03.pdf
SQM120N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0028 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 qualifiedd 100 % Rg and UIS TestedD Co
6.14. Size:168K vishay
sqm120n04-1m7.pdf
SQM120N04-1m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please
Datasheet: SQM110N06-04L
, SQM110N06-06
, SQM110N08-05
, SQM110N10-09
, SQM110P04-04L
, SQM110P06-07L
, SQM110P06-8M9L
, SQM120N02-1M3L
, AON6414A
, SQM120N04-02L
, SQM120N04-03
, SQM120N04-03L
, SQM120N04-04
, SQM120N04-1M7
, SQM120N04-1M7L
, SQM120N04-1M8
, SQM120N04-1M9
.
History: IPI120N06S4-02
| AUIRLR2905
| CS8205
| IRF6729MPBF
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SQM120N03-1M5L replacement
