SQM40N15-38
MOSFET. Datasheet pdf. Equivalent
Type Designator: SQM40N15-38
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 166
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 46
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 310
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038
Ohm
Package:
TO-263
SQM40N15-38
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQM40N15-38
Datasheet (PDF)
..1. Size:742K vishay
sqm40n15-38.pdf
SQM40N15-38www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 150DefinitionRDS(on) () at VGS = 10 V 0.038 TrenchFET Power MOSFETRDS(on) () at VGS = 6 V 0.040 Package with Low Thermal ResistanceID (A) 40 AEC-Q101 QualifieddConfiguration Single 1
7.1. Size:709K vishay
sqm40n10-30.pdf
SQM40N10-30www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 100 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.030 Package with Low Thermal ResistanceRDS(on) () at VGS = 6 V 0.034 AEC-Q101 QualifieddID (A) 40 100 % Rg and UIS Tested
9.1. Size:166K vishay
sqm40p10-40l.pdf
SQM40P10-40Lwww.vishay.comVishay SiliconixAutomotive P-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 100 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.040 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.048 AEC-Q101 QualifieddID (A) - 40 Material categorization:Configuration S
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