All MOSFET. SQM50P08-25L Datasheet

 

SQM50P08-25L Datasheet and Replacement


   Type Designator: SQM50P08-25L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 91 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 356 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-263
 

 SQM50P08-25L substitution

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SQM50P08-25L Datasheet (PDF)

 ..1. Size:169K  vishay
 sqm50p08-25l.pdf pdf_icon

SQM50P08-25L

SQM50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

 7.1. Size:169K  vishay
 sqm50p06-15l.pdf pdf_icon

SQM50P08-25L

SQM50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.015 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.022 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

 7.2. Size:168K  vishay
 sqm50p03-07.pdf pdf_icon

SQM50P08-25L

SQM50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0070 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0110 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

 7.3. Size:154K  vishay
 sqm50p04-09l.pdf pdf_icon

SQM50P08-25L

SQM50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 40 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0094 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0170 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuratio

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Datasheet: SQM47N10-24L , SQM50020EL , SQM50N04-4M0L , SQM50N04-4M1 , SQM50N04-5M0 , SQM50P03-07 , SQM50P04-09L , SQM50P06-15L , IRFP450 , SQM60N06-15 , SQM60N20-35 , SQM85N03-06P , SQM85N10-10 , SQM85N15-19 , SQP100P06-9M3L , SQP120N06-06 , SQP120N10-09 .

History: 2SK3018LT1 | NCEP02590T

Keywords - SQM50P08-25L MOSFET datasheet

 SQM50P08-25L cross reference
 SQM50P08-25L equivalent finder
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 SQM50P08-25L replacement

 

 
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