SSF2418EBK MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF2418EBK
Marking Code: 2418E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOT-23-6
SSF2418EBK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF2418EBK Datasheet (PDF)
ssf2418ebk.pdf
SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)
ssf2418eb.pdf
SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)
ssf2418e.pdf
SSF2418E Main Product Characteristics: VDSS 20V RDS(on) 18mohm(typ.) ID 6A Mark ing an d pi n SOT23-6 Schema t ic diagr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re
ssf2418e.pdf
SSF2418Ewww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23
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