All MOSFET. TK100A06N1 Datasheet

 

TK100A06N1 Datasheet and Replacement


   Type Designator: TK100A06N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 3500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO-220SIS
 

 TK100A06N1 substitution

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TK100A06N1 Datasheet (PDF)

 ..1. Size:230K  toshiba
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TK100A06N1

TK100A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A06N1TK100A06N1TK100A06N1TK100A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)

 ..2. Size:252K  inchange semiconductor
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TK100A06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100A06N1ITK100A06N1FEATURESLow drain-source on-resistance:RDS(ON) = 2.7m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLU

 7.1. Size:231K  toshiba
 tk100a08n1.pdf pdf_icon

TK100A06N1

TK100A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A08N1TK100A08N1TK100A08N1TK100A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)

 8.1. Size:234K  toshiba
 tk100a10n1.pdf pdf_icon

TK100A06N1

TK100A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A10N1TK100A10N1TK100A10N1TK100A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.1 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)

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Datasheet: SSF6010G , SSF7008 , TJ100F04M3L , TJ100F06M3L , TJ150F04M3L , TJ15S10M3 , TJ200F04M3L , TJ9A10M3 , 2SK3918 , TK100A08N1 , TK100A10N1 , TK100E06N1 , TK100E08N1 , TK100E10N1 , TK100L60W , TK100S04N1L , TK10A60W5 .

Keywords - TK100A06N1 MOSFET datasheet

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