All MOSFET. TK14G65W5 Datasheet

 

TK14G65W5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK14G65W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 130 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 13.7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 40 nC
   Rise Time (tr): 40 nS
   Drain-Source Capacitance (Cd): 35 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
   Package: D2PAK

 TK14G65W5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK14G65W5 Datasheet (PDF)

 ..1. Size:237K  toshiba
 tk14g65w5.pdf

TK14G65W5 TK14G65W5

TK14G65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14G65W5TK14G65W5TK14G65W5TK14G65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

 6.1. Size:240K  toshiba
 tk14g65w.pdf

TK14G65W5 TK14G65W5

TK14G65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14G65WTK14G65WTK14G65WTK14G65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top