IRFU110A Datasheet and Replacement
Type Designator: IRFU110A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 8.5 nC
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO251
IRFU110A substitution
IRFU110A Datasheet (PDF)
irfr110a irfu110a.pdf
IRFR/U110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maxim
irfr110pbf irfu110pbf.pdf
PD - 95026AIRFR110PbFIRFU110PbF Lead-Free12/14/04Document Number: 91265 www.vishay.com1IRFR/U110PbFDocument Number: 91265 www.vishay.com2IRFR/U110PbFDocument Number: 91265 www.vishay.com3IRFR/U110PbFDocument Number: 91265 www.vishay.com4IRFR/U110PbFDocument Number: 91265 www.vishay.com5IRFR/U110PbFDocument Number: 91265 www.vishay.com6IRFR/U1
irfu110 sihfu110.pdf
IRFU110, SiHFU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 10 V 0.54 Straight Lead Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt RatingQgs (nC) 2.3 Repetitive Avalanche RatedQgd (nC) 3.8 Fast SwitchingConfiguration Single Ease of Parallel
Datasheet: IRFU014A , IRFU015 , IRFU020 , IRFU022 , IRFU024A , IRFU024N , IRFU025 , IRFU110 , 7N60 , IRFU111 , IRFU120 , IRFU1205 , IRFU120A , IRFU120N , IRFU121 , IRFU130A , IRFU210 .
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