TK20J60W5 Datasheet. Specs and Replacement
Type Designator: TK20J60W5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
Qg ⓘ - Total Gate Charge: 55 nC
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: TO-3P
TK20J60W5 substitution
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TK20J60W5 datasheet
tk20j60w5.pdf
TK20J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W5 TK20J60W5 TK20J60W5 TK20J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str... See More ⇒
tk20j60w.pdf
TK20J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W TK20J60W TK20J60W TK20J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒
tk20j60t.pdf
TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VD... See More ⇒
tk20j60u.pdf
TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0 V... See More ⇒
Detailed specifications: TK200F04N1L, TK20A60W, TK20A60W5, TK20C60W, TK20E60W, TK20E60W5, TK20G60W, TK20J60W, TK10A60D, TK20N60W, TK20N60W5, TK20V60W, TK20V60W5, TK22A10N1, TK22E10N1, TK25A60X, TK25A60X5
Keywords - TK20J60W5 MOSFET specs
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History: TK20N60W5
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