All MOSFET. TK20J60W5 Datasheet

 

TK20J60W5 Datasheet and Replacement


   Type Designator: TK20J60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: TO-3P
 

 TK20J60W5 substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK20J60W5 Datasheet (PDF)

 ..1. Size:239K  toshiba
tk20j60w5.pdf pdf_icon

TK20J60W5

TK20J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20J60W5TK20J60W5TK20J60W5TK20J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 6.1. Size:242K  toshiba
tk20j60w.pdf pdf_icon

TK20J60W5

TK20J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20J60WTK20J60WTK20J60WTK20J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 7.1. Size:152K  toshiba
tk20j60t.pdf pdf_icon

TK20J60W5

TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VD

 7.2. Size:192K  toshiba
tk20j60u.pdf pdf_icon

TK20J60W5

TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V

Datasheet: TK200F04N1L , TK20A60W , TK20A60W5 , TK20C60W , TK20E60W , TK20E60W5 , TK20G60W , TK20J60W , IRFZ24N , TK20N60W , TK20N60W5 , TK20V60W , TK20V60W5 , TK22A10N1 , TK22E10N1 , TK25A60X , TK25A60X5 .

History: KUK7105-40AIE | NCEP6050QU | PTP4N60 | CHM210BGP | 2N60L-T2Q-T | SIHFD210 | MRF5003

Keywords - TK20J60W5 MOSFET datasheet

 TK20J60W5 cross reference
 TK20J60W5 equivalent finder
 TK20J60W5 lookup
 TK20J60W5 substitution
 TK20J60W5 replacement

 

 
Back to Top

 


 
.