All MOSFET. TK45S06K3L Datasheet

 

TK45S06K3L MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK45S06K3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DPAK

 TK45S06K3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK45S06K3L Datasheet (PDF)

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 tk45s06k3l.pdf

TK45S06K3L TK45S06K3L

TK45S06K3LMOSFETs Silicon N-channel MOS (U-MOS)TK45S06K3LTK45S06K3LTK45S06K3LTK45S06K3L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.4 m (typ.) (VGS = 10 V)(2) Low

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