TK45S06K3L MOSFET. Datasheet pdf. Equivalent
Type Designator: TK45S06K3L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DPAK
TK45S06K3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK45S06K3L Datasheet (PDF)
..1. Size:239K toshiba
tk45s06k3l.pdf
tk45s06k3l.pdf
TK45S06K3LMOSFETs Silicon N-channel MOS (U-MOS)TK45S06K3LTK45S06K3LTK45S06K3LTK45S06K3L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.4 m (typ.) (VGS = 10 V)(2) Low
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