TK62J60W Datasheet and Replacement
Type Designator: TK62J60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
|Id| ⓘ - Maximum Drain Current: 61.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 180 nC
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-3P
TK62J60W substitution
TK62J60W Datasheet (PDF)
tk62j60w.pdf
TK62J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK62J60WTK62J60WTK62J60WTK62J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk62j60w5.pdf
TK62J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK62J60W5TK62J60W5TK62J60W5TK62J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 170 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.036 (typ.) by used to Super Junction St
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