All MOSFET. TK6P65W Datasheet

 

TK6P65W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK6P65W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 5.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 11 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 12 pF

Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm

Package: DPAK

TK6P65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK6P65W Datasheet (PDF)

1.1. tk6p65w.pdf Size:380K _upd-mosfet

TK6P65W
TK6P65W

TK6P65W MOSFETs Silicon N-Channel MOS (DTMOS) TK6P65W TK6P65W TK6P65W TK6P65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.89 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement

1.2. tk6p65w.pdf Size:380K _toshiba

TK6P65W
TK6P65W

TK6P65W MOSFETs Silicon N-Channel MOS (DTMOS) TK6P65W TK6P65W TK6P65W TK6P65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.89 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement

 5.1. tk6p60w.pdf Size:240K _upd-mosfet

TK6P65W
TK6P65W

TK6P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK6P60W TK6P60W TK6P60W TK6P60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance

5.2. tk6p60w.pdf Size:240K _toshiba

TK6P65W
TK6P65W

TK6P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK6P60W TK6P60W TK6P60W TK6P60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance

 5.3. tk6p60w.pdf Size:263K _inchange_semiconductor

TK6P65W
TK6P65W

Isc N-Channel MOSFET Transistor TK6P60W ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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