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TK6P65W Spec and Replacement


   Type Designator: TK6P65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: DPAK

 TK6P65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK6P65W Specs

 ..1. Size:380K  toshiba
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TK6P65W

TK6P65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6P65W TK6P65W TK6P65W TK6P65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.89 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

 9.1. Size:240K  toshiba
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TK6P65W

TK6P60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6P60W TK6P60W TK6P60W TK6P60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.68 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

 9.2. Size:263K  inchange semiconductor
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TK6P65W

Isc N-Channel MOSFET Transistor TK6P60W FEATURES With To-252(DPAK) package Low input capacitance and gate charge 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source V... See More ⇒

Detailed specifications: TK62N60W5 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , IRFB3607 , TK6Q60W , TK6Q65W , TK70J04K3Z , TK72A08N1 , TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W .

History: IPP60R190P6 | AP02N90JB

Keywords - TK6P65W MOSFET specs

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