TK8P60W Datasheet and Replacement
Type Designator: TK8P60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: DPAK
TK8P60W substitution
TK8P60W Datasheet (PDF)
tk8p60w.pdf

TK8P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8P60WTK8P60WTK8P60WTK8P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
tk8p60w5.pdf

TK8P60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK8P60W5TK8P60W5TK8P60W5TK8P60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 80 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.44 (typ.) by used to Super
tk8p65w.pdf

TK8P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK8P65WTK8P65WTK8P65WTK8P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.55 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
Datasheet: TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z , TK80A04K3L , TK8A60W , TK8A60W5 , TK8A65W , IRFB31N20D , TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E .
History: BUK438-500B
Keywords - TK8P60W MOSFET datasheet
TK8P60W cross reference
TK8P60W equivalent finder
TK8P60W lookup
TK8P60W substitution
TK8P60W replacement
History: BUK438-500B



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