TMAN20N50 Specs and Replacement
Type Designator: TMAN20N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 296 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-3PN
TMAN20N50 substitution
- MOSFET ⓘ Cross-Reference Search
TMAN20N50 datasheet
tman20n50.pdf
TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A ... See More ⇒
tman20n50a.pdf
TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A ... See More ⇒
tman20n60a.pdf
TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A ... See More ⇒
tman20n60.pdf
TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A ... See More ⇒
Detailed specifications: TMAN10N80, TMAN11N90AZ, TMAN11N90Z, TMAN12N80AZ, TMAN12N80Z, TMAN15N50, TMAN16N60, TMAN16N60A, EMB04N03H, TMAN20N50A, TMAN20N60, TMAN20N60A, TMAN23N50, TMAN23N50A, TMAN7N90, TMAN8N80, TMAN9N90
Keywords - TMAN20N50 MOSFET specs
TMAN20N50 cross reference
TMAN20N50 equivalent finder
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TMAN20N50 substitution
TMAN20N50 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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