All MOSFET. TMAN20N50 Datasheet

 

TMAN20N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMAN20N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3PN

 TMAN20N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMAN20N50 Datasheet (PDF)

 ..1. Size:484K  trinnotech
 tman20n50.pdf

TMAN20N50 TMAN20N50

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

 0.1. Size:503K  trinnotech
 tman20n50a.pdf

TMAN20N50 TMAN20N50

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

 7.1. Size:505K  trinnotech
 tman20n60a.pdf

TMAN20N50 TMAN20N50

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

 7.2. Size:694K  trinnotech
 tman20n60.pdf

TMAN20N50 TMAN20N50

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top