All MOSFET. TMAN20N50 Datasheet

 

TMAN20N50 Datasheet and Replacement


   Type Designator: TMAN20N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3PN
 

 TMAN20N50 substitution

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TMAN20N50 Datasheet (PDF)

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TMAN20N50

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

 0.1. Size:503K  trinnotech
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TMAN20N50

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

 7.1. Size:505K  trinnotech
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TMAN20N50

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

 7.2. Size:694K  trinnotech
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TMAN20N50

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A

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Datasheet: TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , 2SK3918 , TMAN20N50A , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 .

History: SWD2N60DC | STB20NM50-1 | JSM2302

Keywords - TMAN20N50 MOSFET datasheet

 TMAN20N50 cross reference
 TMAN20N50 equivalent finder
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